IndiumV3, Main, Repository, bibRecord, 000583

Room temperature fabricated flexible NiO/IGZO pn diode under mechanical strain

Identifieur interne : 000583 ( Main/Repository ); précédent : 000582; suivant : 000584

Room temperature fabricated flexible NiO/IGZO pn diode under mechanical strain

Auteurs : RBID : Pascal:13-0254947

Descripteurs français

Pascal (Inist)
- Température ambiante, Jonction p n, Diode, Déformation mécanique, Composant électronique, Semiconducteur type n, Basse température, Semiconducteur type p, Evaluation performance, Densité porteur charge, Mobilité Hall, Idéalité, Effet on off, Contrainte compression, Structure flexible, Matière plastique, Oxyde d'indium, Oxyde de gallium, Oxyde de zinc, Oxyde de nickel, Imide polymère.
Wicri :
- concept : Composant électronique, Matière plastique.

English descriptors

KwdEn :
- Charge carrier density, Compressive stress, Diode, Electronic component, Flexible structure, Gallium oxide, Hall mobility, Ideality, Indium oxide, Low temperature, Mechanical deformation, Nickel oxide, On off effect, Performance evaluation, Plastics, Polyimide, Room temperature, Zinc oxide, n type semiconductor, p n junction, p type semiconductor.

Abstract

Flexible electronic devices fabricated on plastic substrates require semiconductors, which can be deposited at low temperatures. While Indium-Gallium-Zinc-Oxide (IGZO) is a promising n-type oxide semiconductor, a p-type oxide semiconductor with similar performance is currently not available. Here, the room temperature deposition of nickel oxide (NiO) acting as a p-type oxide semiconductor on a flexible plastic foil is described. NiO exhibits a carrier density of +1.6 × 10¹⁷cm^-3 and a Hall mobility of 0.45 cm²/Vs. p-type NiO is combined with n-type IGZO to fabricate flexible pn diodes on a free-standing polyimide substrate. The diodes show an ideality factor of ≃3.2 and an on-off current-ratio of ≃10⁴. The NiO/IGZO diodes stay fully operational when exposed to tensile or compressive mechanical strain of 0.25%, induced by bending to a radius of 10 mm. In addition, a 50 Hz AC signal was rectified using a flexible diode while flat and bent.

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Pascal:13-0254947

Le document en format XML

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<author><name sortKey="M Nzenrieder, Niko" uniqKey="M Nzenrieder N">Niko M Nzenrieder</name>
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<author><name sortKey="Zysset, Christoph" uniqKey="Zysset C">Christoph Zysset</name>
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<author><name sortKey="Petti, Luisa" uniqKey="Petti L">Luisa Petti</name>
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<author><name sortKey="Salvatore, Giovanni A" uniqKey="Salvatore G">Giovanni A. Salvatore</name>
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<author><name sortKey="Troster, Gerhard" uniqKey="Troster G">Gerhard Tröster</name>
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<term>Gallium oxide</term>
<term>Hall mobility</term>
<term>Ideality</term>
<term>Indium oxide</term>
<term>Low temperature</term>
<term>Mechanical deformation</term>
<term>Nickel oxide</term>
<term>On off effect</term>
<term>Performance evaluation</term>
<term>Plastics</term>
<term>Polyimide</term>
<term>Room temperature</term>
<term>Zinc oxide</term>
<term>n type semiconductor</term>
<term>p n junction</term>
<term>p type semiconductor</term>
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<keywords scheme="Pascal" xml:lang="fr"><term>Température ambiante</term>
<term>Jonction p n</term>
<term>Diode</term>
<term>Déformation mécanique</term>
<term>Composant électronique</term>
<term>Semiconducteur type n</term>
<term>Basse température</term>
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<term>Mobilité Hall</term>
<term>Idéalité</term>
<term>Effet on off</term>
<term>Contrainte compression</term>
<term>Structure flexible</term>
<term>Matière plastique</term>
<term>Oxyde d'indium</term>
<term>Oxyde de gallium</term>
<term>Oxyde de zinc</term>
<term>Oxyde de nickel</term>
<term>Imide polymère</term>
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<front><div type="abstract" xml:lang="en">Flexible electronic devices fabricated on plastic substrates require semiconductors, which can be deposited at low temperatures. While Indium-Gallium-Zinc-Oxide (IGZO) is a promising n-type oxide semiconductor, a p-type oxide semiconductor with similar performance is currently not available. Here, the room temperature deposition of nickel oxide (NiO) acting as a p-type oxide semiconductor on a flexible plastic foil is described. NiO exhibits a carrier density of +1.6 × 10<sup>17 </sup>
cm<sup>-3</sup>
 and a Hall mobility of 0.45 cm<sup>2</sup>
/Vs. p-type NiO is combined with n-type IGZO to fabricate flexible pn diodes on a free-standing polyimide substrate. The diodes show an ideality factor of ≃3.2 and an on-off current-ratio of ≃10<sup>4</sup>
. The NiO/IGZO diodes stay fully operational when exposed to tensile or compressive mechanical strain of 0.25%, induced by bending to a radius of 10 mm. In addition, a 50 Hz AC signal was rectified using a flexible diode while flat and bent.</div>
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<fA08 i1="01" i2="1" l="ENG"><s1>Room temperature fabricated flexible NiO/IGZO pn diode under mechanical strain</s1>
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<fC01 i1="01" l="ENG"><s0>Flexible electronic devices fabricated on plastic substrates require semiconductors, which can be deposited at low temperatures. While Indium-Gallium-Zinc-Oxide (IGZO) is a promising n-type oxide semiconductor, a p-type oxide semiconductor with similar performance is currently not available. Here, the room temperature deposition of nickel oxide (NiO) acting as a p-type oxide semiconductor on a flexible plastic foil is described. NiO exhibits a carrier density of +1.6 × 10<sup>17 </sup>
cm<sup>-3</sup>
 and a Hall mobility of 0.45 cm<sup>2</sup>
/Vs. p-type NiO is combined with n-type IGZO to fabricate flexible pn diodes on a free-standing polyimide substrate. The diodes show an ideality factor of ≃3.2 and an on-off current-ratio of ≃10<sup>4</sup>
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<s5>26</s5>
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<s5>26</s5>
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<s5>27</s5>
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<s2>NK</s2>
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<fC03 i1="21" i2="X" l="ENG"><s0>Polyimide</s0>
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<fN44 i1="01"><s1>OTO</s1>
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<fN82><s1>OTO</s1>
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Room temperature fabricated flexible NiO/IGZO pn diode under mechanical strain

Room temperature fabricated flexible NiO/IGZO pn diode under mechanical strain

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